SIA446DJ-T1-GE3

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SIA446DJ-T1-GE3 - Vishay(Intertechnologies)
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Краткое описание: N-Channel MOSFET, 150V, 7.7A, 177mR, SC-70, Surface Mount
Производитель Vishay(Intertechnologies)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 150V drain-source voltage and 7.7A continuous drain current. Offers a low 177mΩ maximum drain-source on-resistance. Designed for surface mount applications with a compact SC-70 package, measuring 2.05mm x 2.05mm x 0.75mm. Includes fast switching characteristics with a 5ns turn-on delay and 10ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 19W.
RoHS Compliant
Mount Surface Mount
Width 2.05mm
Height 0.75mm
Length 2.05mm
Series ThunderFET®
Polarity N-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 177mR
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 230pF
Threshold Voltage 3.5V
Number of Channels 1
Turn-On Delay Time 5ns
Turn-Off Delay Time 10ns
Reach SVHC Compliant Unknown
Max Power Dissipation 19W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 165mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7.7A
Drain to Source Voltage (Vdss) 150V

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