SIA448DJ-T1-GE3
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Краткое описание:
N-Channel MOSFET, 20V, 12A, 15mR Rds On, Surface Mount
Дополнительная информация
N-channel MOSFET transistor featuring a 20V drain-to-source voltage and 12A continuous drain current. Offers a low 15mΩ drain-to-source resistance at 10V gate-to-source voltage, with a threshold voltage of 400mV. Designed for surface mount applications with a compact 2.05mm x 2.05mm x 0.75mm footprint. Supports a maximum power dissipation of 19.2W and operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.38nF |
| Threshold Voltage | 400mV |
| Number of Channels | 2 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 19.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 20V |
