SIA449DJ-T1-GE3
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Краткое описание:
P-Channel TrenchFET MOSFET 30V 12A 20mR 19W Surface Mount
Дополнительная информация
The SIA449DJ-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 19W and a drain to source resistance of 20mR. The device is packaged in a surface mount package and is RoHS compliant. The MOSFET has a continuous drain current of 12A and a drain to source voltage of 30V.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 16ns |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.14nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 39ns |
| Max Power Dissipation | 19W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | -1.5V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
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