SIA462DJ-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 30V 12A 18mR 3.5W Surface Mount
Дополнительная информация
The SIA462DJ-T1-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 19W and a maximum drain to source voltage of 30V. The device has a maximum drain current of 12A and a drain to source resistance of 18mR. It is RoHS compliant and available in a tape and reel packaging with 3000 units per package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 570pF |
| Power Dissipation | 3.5W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 19W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
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