SIA811DJ-T1-GE3

Снят с производства
SIA811DJ-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 4.5A 94mR SC70-6 SMT
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET with 20V drain-source voltage and 4.5A continuous drain current. Features low 94mΩ drain-source resistance and 6.5W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Surface mountable in a compact SC70-6 package, ideal for space-constrained applications. RoHS compliant and supplied on tape and reel for automated assembly.
RoHS Compliant
Mount Surface Mount
Width 2.05mm
Height 0.75mm
Length 2.05mm
Series LITTLE FOOT®
Weight 0.000988oz
Polarity P-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 94mR
Resistance 0.094R
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 355pF
Number of Channels 1
Turn-On Delay Time 5ns
Turn-Off Delay Time 20ns
Max Power Dissipation 6.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 94mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 4.5A
Drain to Source Voltage (Vdss) 20V

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