SIA813DJ-T1-GE3

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SIA813DJ-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CHANNEL MOSFET 20V 3.6A 94mR 6.5W Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The SIA813DJ-T1-GE3 is a P-CHANNEL MOSFET from Vishay with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 6.5W and a drain to source resistance of 94mR. The device is surface mount and packaged in tape and reel. It is RoHS compliant and part of the LITTLE FOOT series.
RoHS Compliant
Mount Surface Mount
Series LITTLE FOOT®
Polarity P-CHANNEL
Fall Time 50ns
Packaging Tape and Reel
Rds On Max 94mR
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 355pF
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 40ns
Max Power Dissipation 6.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 94mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 3.6A
Drain to Source Voltage (Vdss) 20V

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