SIA814DJ-T1-GE3

Снят с производства
SIA814DJ-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 4.3A 50mR SC
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-CHANNEL MOSFET, 30V Vds, 4.3A Continuous Drain Current, 61mΩ Max Drain-Source On-Resistance at 10V Vgs. Features 6.5W power dissipation, 12ns fall time, and 15ns turn-off delay. Operates from -55°C to 150°C, with 340pF input capacitance. Surface mountable in SC package, RoHS compliant, and supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Series LITTLE FOOT®
Polarity N-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 61mR
Nominal Vgs 1.5V
Package/Case SC
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 340pF
Threshold Voltage 1.5V
Radiation Hardening No
Turn-Off Delay Time 15ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.9W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 50mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 4.3A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 61mR

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