SIA921EDJ-T1-GE3

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SIA921EDJ-T1-GE3 - Vishay(Siliconix)
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Краткое описание: Dual P-Ch MOSFET 20V 4.5A 59mR SC70-6
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual P-Channel MOSFET, 20V Drain-Source Voltage, 4.5A Continuous Drain Current, 59mΩ Max Drain-Source On Resistance. Features a 5ns turn-on delay and 10ns fall time. Surface mountable in a compact TSOP package, operating from -55°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 2.05mm
Height 0.75mm
Length 2.05mm
Series TrenchFET®
Weight 0.000988oz
Polarity P-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 59mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 1
Power Dissipation 1.9W
Number of Channels 2
Number of Elements 2
Turn-On Delay Time 5ns
Radiation Hardening No
Turn-Off Delay Time 25ns
Max Power Dissipation 7.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 59mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 4.5A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 59MR

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