SIB457EDK-T1-GE3

Производится
SIB457EDK-T1-GE3 - Vishay(Siliconix)
Краткое описание: P-CH MOSFET -20V, 6.8A, 35mR, PowerPAK SC-75
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel PowerPAK SC-75 MOSFET with 20V drain-source voltage and 6.8A continuous drain current. Features low 35mΩ drain-source on-resistance and 2.4W maximum power dissipation. Operates from -55°C to 150°C, ideal for surface mount applications. Includes fast switching times with turn-on delay of 0.34µs and fall time of 1.9µs. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.003386oz
Polarity P-CHANNEL
Fall Time 1.9us
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 35mR
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 2.4W
Threshold Voltage -1V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 0.34us
Turn-Off Delay Time 3us
Reach SVHC Compliant Unknown
Max Power Dissipation 2.4W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 35mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 6.8A
Drain to Source Voltage (Vdss) -20V
Drain-source On Resistance-Max 35mR

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