SIB914DK-T1-GE3
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Краткое описание:
2 N-CH MOSFET 8V 1.5A 113mR SC-75 Surface Mount
Дополнительная информация
Dual N-channel MOSFET featuring 8V Vdss and 1.5A continuous drain current. Offers low on-resistance with a maximum of 113mR at 5V Vgs. This surface mount component, housed in a compact SC package (1.6mm x 1.6mm x 0.75mm), boasts fast switching speeds with a 4ns turn-on delay and 7ns fall time. Operating across a wide temperature range of -55°C to 150°C, it is RoHS compliant and designed for efficient power management.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 0.75mm |
| Length | 1.6mm |
| Series | TrenchFET® |
| Weight | 0.003386oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 113mR |
| Nominal Vgs | 800mV |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 125pF |
| Threshold Voltage | 800mV |
| Number of Channels | 2 |
| Turn-On Delay Time | 4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 90mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 113mR |
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