SIDR680DP-T1-GE3
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Краткое описание:
Vishay Siliconix SIDR680DP-T1-GE3 N-Channel 80V TrenchFET Gen IV Power MOSFET
Дополнительная информация
The SIDR680DP-T1-GE3 is a high-performance N-channel 80 V MOSFET based on Vishay Siliconix TrenchFET Gen IV technology. It features industry-low on-resistance and low total gate charge, optimizing efficiency in high-power conversion applications. The device is housed in the PowerPAK SO-8DC package, which utilizes top-side double cooling for enhanced thermal management. Common applications include synchronous rectification, DC/DC conversion, power supplies, and battery management systems.
| RoHS | Compliant |
| Halogen-free | Yes |
| Gate-Source Voltage (Vgs) | ±20V |
| Drain-Source Voltage (Vds) | 80V |
| Moisture Sensitivity Level | MSL1 |
| Total Gate Charge (Qg) typ | 69.5nC |
| Operating Temperature Range | -55 to +150°C |
| Input Capacitance (Ciss) typ | 5150pF |
| Power Dissipation (Pd) Tc=25°C | 125W |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 to 3.4V |
| Continuous Drain Current (Id) at Ta=25°C | 32.8A |
| Continuous Drain Current (Id) at Tc=25°C | 100A |
| Drain-Source On-Resistance (Rds(on)) max at Vgs=10V | 2.4mΩ |
| Drain-Source On-Resistance (Rds(on)) max at Vgs=7.5V | 2.9mΩ |
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