SIE802DF-T1-E3
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Краткое описание:
N-CH MOSFET 30V 42.7A 1.9mR SMT
Дополнительная информация
N-channel MOSFET, 30V Vdss, 42.7A continuous drain current, and 1.9mR maximum drain-source on-resistance. Features a 10-POLARPAK surface mount package with dimensions of 6.15mm length, 5.16mm width, and 0.8mm height. Offers a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 25ns and fall time of 10ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.16mm |
| Height | 0.8mm |
| Length | 6.15mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.9mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 7nF |
| Power Dissipation | 5.2W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 42.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 1.9mR |
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