SIE802DF-T1-GE3
Дополнительная информация
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 1.9mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 7nF |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 42.7A |
| Drain to Source Voltage (Vdss) | 30V |
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