SIE810DF-T1-E3
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Краткое описание:
Dual N-Ch MOSFET, 20V, 1.4mR Rds(on), 45A, SOIC
Дополнительная информация
Dual N-Channel Power MOSFET, 20V Vdss, 45A Continuous Drain Current, 1.4mR Rds On Max. Features 125W Max Power Dissipation, 150°C Max Operating Temperature, and 1.3V Threshold Voltage. Surface mount SOIC package with 20ns turn-on delay and 10ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.16mm |
| Height | 0.8mm |
| Length | 6.15mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.4mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 13nF |
| Power Dissipation | 125mW |
| Threshold Voltage | 1.3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 20MR |
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