SIE818DF-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 75V 16A 9.5mR 125W Surface Mount
Дополнительная информация
The Vishay SIE818DF-T1-GE3 is a single N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 125W and a drain to source resistance of 9.5mR. The device is packaged in a small outline R-XDSO-N4 package and is suitable for surface mount applications. It is RoHS compliant and has a maximum drain to source voltage of 75V and a continuous drain current of 16A.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.2nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 75V |
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