SIE822DF-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 20V 31A 104W Surface Mount
Дополнительная информация
The SIE822DF-T1-GE3 is a single N-CHANNEL TrenchFET MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 104W and a continuous drain current of 31A. The device is surface mount and RoHS compliant. It has a drain to source resistance of 3.4mR and a turn-off delay time of 35ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 3.4mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.2nF |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Voltage (Vdss) | 20V |
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