SIE832DF-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 40V 23.6A 5.5mR Surface Mount
Дополнительная информация
The SIE832DF-T1-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 104W and a continuous drain current of 23.6A. The device is RoHS compliant and has a drain to source resistance of 5.5mR. It is suitable for high-power applications and is available in a tape and reel packaging with 3000 units per package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Packaging | Tape and Reel |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 3.8nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 45ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 23.6A |
| Drain to Source Voltage (Vdss) | 40V |
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