SIE878DF-T1-GE3
Производится
Увеличить
Краткое описание:
N-CHANNEL TrenchFET MOSFET 25V 45A 5.2mR 3000/Reel
Дополнительная информация
The SIE878DF-T1-GE3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 25W and is RoHS compliant. The device features a drain to source resistance of 5.2mR and a gate to source voltage of 20V.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Packaging | Tape and Reel |
| Rds On Max | 5.2mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.4nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 22ns |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Voltage (Vdss) | 25V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
