SIHB15N60E-GE3
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Краткое описание:
600V 15A N-CH MOSFET D2PAK, 280mR Rds(on)
Дополнительная информация
N-channel MOSFET with 600V drain-source voltage and 15A continuous drain current. Features low 280mΩ drain-source on-resistance and 180W maximum power dissipation. Surface mount D2PAK package with fast switching times, including 17ns turn-on and 35ns turn-off delays. Operates across a wide temperature range from -55°C to 150°C, with lead-free and RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | E |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 66ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 280mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 1.35nF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 180W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 280mR |
