SIHB22N65E-GE3
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Краткое описание:
N-CHANNEL MOSFET 650V 22A TO-263 Surface Mount
Дополнительная информация
The SIHB22N65E-GE3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 650V and a continuous drain current of 22A. The device has a maximum power dissipation of 227W and a gate to source voltage of 4V. It is packaged in a TO-263 case and is compliant with RoHS regulations.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Fall Time | 38ns |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| Input Capacitance | 2.415nF |
| Power Dissipation | 227W |
| Number of Elements | 1 |
| Turn-Off Delay Time | 73ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 227W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 4V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
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