SIHB30N60E-GE3
Производится
Увеличить
Краткое описание:
600V 29A N-CH MOSFET, 125mR RdsOn, D2PAK
Дополнительная информация
N-channel Power MOSFET, 600V Drain-Source Voltage, 29A Continuous Drain Current, and 125mΩ Drain-Source On-Resistance. Features a 2V Threshold Voltage, 2.6nF Input Capacitance, and 250W Power Dissipation. Surface mount D2PAK package with fast switching speeds, including 19ns Turn-On Delay and 36ns Fall Time. Operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | E |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 36ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 125mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 2.6nF |
| Power Dissipation | 250W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 63ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 125mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 125mR |
