SIHD6N62E-GE3
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Краткое описание:
MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
Дополнительная информация
MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 900mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 578pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 78W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 900mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 620V |
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