SIHF15N60E-E3

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SIHF15N60E-E3 - Vishay(Siliconix)
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Краткое описание: 600V 15A N-CH MOSFET TO-220
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source voltage and 15A continuous drain current. This through-hole component offers a low 280mΩ drain-source on-resistance and a 2V threshold voltage. Operating from -55°C to 150°C, it has a maximum power dissipation of 34W. Packaged in a TO-220-3 configuration, this RoHS compliant MOSFET exhibits fast switching characteristics with turn-on delay of 17ns and fall time of 33ns.
RoHS Compliant
Mount Through Hole
Series E
Polarity N-CHANNEL
Fall Time 33ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 280mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 1.35nF
Power Dissipation 34W
Threshold Voltage 2V
Number of Elements 1
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 35ns
Reach SVHC Compliant Unknown
Max Power Dissipation 34W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 280mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 280mR

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