SIHF18N50D-E3
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Краткое описание:
500V 18A N-CH MOSFET TO-220 280mR Through Hole
Дополнительная информация
N-Channel Power MOSFET, TO-220-3 package, designed for general-purpose power applications. Features a 500V Drain-Source Voltage (Vdss) and a continuous Drain Current (ID) of 18A. Offers a low Drain-Source On-Resistance (Rds On) of 280mR and a maximum power dissipation of 39W. Includes fast switching characteristics with turn-on delay of 19ns and fall time of 30ns. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.8mm |
| Length | 10.63mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Packaging | Rail/Tube |
| Rds On Max | 280mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 1.5nF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 39W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 500V |
