SIHF22N60E-E3
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Краткое описание:
600V 21A N-Channel MOSFET TO-220AB 180mR
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 21A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 180mΩ drain-source on-resistance and 227W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it operates from -55°C to 150°C and includes fast switching characteristics with a 18ns turn-on delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 16.12mm |
| Length | 10.63mm |
| Polarity | N-CHANNEL |
| Fall Time | 54ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.92nF |
| Power Dissipation | 227W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 59ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 227W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 180mR |
| Drain to Source Breakdown Voltage | 600V |
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