SIHG22N50D-E3

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SIHG22N50D-E3 - Vishay(Siliconix)
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Краткое описание: N-CHANNEL MOSFET 500V 22A TO-247-3
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The SIHG22N50D-E3 is a TO-247-3 packaged N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 312W and is RoHS compliant. The device features a continuous drain current of 22A and a drain to source voltage of 500V. It also has a gate to source voltage of 30V and an input capacitance of 1.938nF.
RoHS Compliant
Mount Through Hole
Weight 1.340411oz
Polarity N-CHANNEL
Fall Time 40ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 230mR
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 500
Input Capacitance 1.938nF
Number of Channels 1
Turn-On Delay Time 21ns
Radiation Hardening No
Turn-Off Delay Time 47ns
Max Power Dissipation 312W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 230mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 22A
Drain to Source Voltage (Vdss) 500V

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