SIHG22N60E-GE3
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Краткое описание:
600V 21A N-Channel MOSFET TO-247AC
Дополнительная информация
N-Channel Power MOSFET, 600V Vdss, 21A continuous drain current, and 180mΩ Rds On. Features a TO-247AC through-hole package, 227W max power dissipation, and operates from -55°C to 150°C. Includes 1.92nF input capacitance and fast switching times with 18ns turn-on delay. This silicon metal-oxide semiconductor FET is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.31mm |
| Height | 20.82mm |
| Length | 15.87mm |
| Weight | 1.340411oz |
| Polarity | N-CHANNEL |
| Fall Time | 54ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Package/Case | TO-247AC |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 1.92nF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 59ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 227W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 180mR |
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