SIHG24N65E-E3
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Краткое описание:
650V 24A N-Channel MOSFET TO-247AC 145mR Rds On
Дополнительная информация
N-Channel Power MOSFET, 650V Vdss, 24A continuous drain current, and 145mΩ maximum drain-source on-resistance. Features a 2V threshold voltage, 2.74nF input capacitance, and 250W maximum power dissipation. Designed for through-hole mounting in a TO-247AC package, this silicon metal-oxide semiconductor FET offers fast switching with turn-on delay of 24ns and fall time of 69ns. RoHS compliant and operating from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.340411oz |
| Polarity | N-CHANNEL |
| Fall Time | 69ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 145mR |
| Package/Case | TO-247AC |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 2.74nF |
| Power Dissipation | 250W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 24ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 145mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 145mR |
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