SIHG32N50D-E3
Производится
Увеличить
Краткое описание:
N-CHANNEL MOSFET, 500V, 30A, 150mR, TO-247-3, Through Hole
Дополнительная информация
The SIHG32N50D-E3 is a N-CHANNEL MOSFET with a maximum drain to source voltage of 500V and a continuous drain current of 30A. It has a drain to source resistance of 150mR and an input capacitance of 2.55nF. The device is packaged in a TO-247-3 case and is designed for through hole mounting. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 390W.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.340411oz |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Package/Case | TO-247-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 2.55nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 58ns |
| Max Power Dissipation | 390W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 500V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
