SIHG47N60E-E3

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SIHG47N60E-E3 - Vishay(Intertechnologies)
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Краткое описание: 600V 47A N-Channel MOSFET TO-247AC 64mR RdsOn
Производитель Vishay(Intertechnologies)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET with 600V drain-source voltage and 47A continuous drain current. Features 64mΩ drain-source on-resistance and 357W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. This through-hole component is housed in a TO-247AC package and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Weight 1.340411oz
Polarity N-CHANNEL
Fall Time 13ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 64mR
Package/Case TO-247AC
RoHS Compliant Yes
Package Quantity 500
Input Capacitance 9.62nF
Power Dissipation 357W
Threshold Voltage 2.5V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 24ns
Radiation Hardening No
Turn-Off Delay Time 94ns
Reach SVHC Compliant Unknown
Max Power Dissipation 357W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 64mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 47A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 64mR