SIHG47N60E-GE3
Производится
Увеличить
Краткое описание:
600V 47A N-Channel MOSFET TO-247 64mR
Дополнительная информация
N-channel silicon power MOSFET featuring 600V drain-source voltage and 47A continuous drain current. This through-hole component offers a low 64mΩ drain-source on-resistance and a maximum power dissipation of 357W. It operates within a temperature range of -55°C to 150°C and includes a 2.5V threshold voltage. The TO-247-3 package houses a single element with a typical input capacitance of 9.62nF. This device is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.340411oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 64mR |
| Package/Case | TO-247-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 9.62nF |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 24ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 94ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 357W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 64mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 64mR |
