SIHP10N40D-GE3

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SIHP10N40D-GE3 - Vishay(Siliconix)
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Краткое описание: 400V 10A N-CH MOSFET TO-220AB Through Hole
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel MOSFET, 400V drain-source voltage, 10A continuous drain current, and 600mΩ drain-to-source resistance. Features include a 3V threshold voltage, 12ns turn-on delay, 18ns turn-off delay, and 14ns fall time. Operates within a -55°C to 150°C temperature range with a maximum power dissipation of 147W. Packaged in a TO-220-3 through-hole mount with RoHS compliance.
RoHS Compliant
Mount Through Hole
Width 4.65mm
Height 9.01mm
Length 10.51mm
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 14ns
Packaging Rail/Tube
Rds On Max 600mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 526pF
Threshold Voltage 3V
Number of Channels 1
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 18ns
Reach SVHC Compliant Unknown
Max Power Dissipation 147W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 600mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 10A
Drain to Source Voltage (Vdss) 400V

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