SIHP12N50C-E3
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Краткое описание:
500V 12A N-Channel Power MOSFET TO-220-3
Дополнительная информация
N-Channel Power MOSFET, TO-220-3 package, featuring a 500V drain-source voltage and 12A continuous drain current. Offers a maximum drain-source on-resistance of 555mΩ and a threshold voltage of 3V. Designed for through-hole mounting, this RoHS compliant component boasts a maximum power dissipation of 208W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 6ns fall time, 18ns turn-on delay, and 23ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 555mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 1.375nF |
| Power Dissipation | 208W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 208W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 460mR |
| Gate to Source Voltage (Vgs) | 500V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 555mR |
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