SIHP12N60E-E3
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Краткое описание:
600V 12A N-Channel MOSFET, 380mR Rds On, TO-220
Дополнительная информация
N-Channel Power MOSFET, 600V Vdss, 12A Continuous Drain Current (ID), and 0.38ohm Drain-Source On-Resistance (Rds On Max). Features include a 147W maximum power dissipation, 937pF input capacitance, and fast switching times with a 14ns turn-on delay and 19ns fall time. This silicon, metal-oxide semiconductor FET is housed in a TO-220-3 through-hole package, operating from -55°C to 150°C, and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 937pF |
| Power Dissipation | 147W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 147W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 380mR |
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