SIHP15N60E-GE3

SIHP15N60E-GE3 - Vishay(Siliconix)
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Краткое описание: 600V 15A N-CH MOSFET TO-220-3
Производитель Vishay(Siliconix)
Категория MOSFET

Дополнительная информация

N-channel power MOSFET with 600V drain-source voltage and 15A continuous drain current. Features low 280mΩ drain-source on-resistance and 180W maximum power dissipation. Operates from -55°C to 150°C, packaged in a TO-220-3 through-hole mount. Includes fast switching characteristics with 17ns turn-on delay and 33ns fall time.
RoHS Not CompliantNo
Mount Through Hole
Width 4.65mm
Height 9.01mm
Length 10.51mm
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 33ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 280mR
Package/Case TO-220-3
Package Quantity 1000
Input Capacitance 1.35nF
Threshold Voltage 2V
Number of Channels 1
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 35ns
Reach SVHC Compliant Unknown
Max Power Dissipation 180W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 280mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 280mR

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