SIHP17N60D-E3

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SIHP17N60D-E3 - Vishay(Siliconix)
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Краткое описание: N-CHANNEL MOSFET 600V 17A TO-220-3 Through Hole
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

The SIHP17N60D-E3 is a TO-220-3 flange mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 277.8W and a continuous drain current of 17A. The device is RoHS compliant and features a drain to source voltage of 600V, a drain to source resistance of 340mR, and an input capacitance of 1.78nF. The SIHP17N60D-E3 has a turn-off delay time of 37ns and a turn-on delay time of 22ns.
RoHS Compliant
Mount Through Hole
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 30ns
Packaging Rail/Tube
Rds On Max 340mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 1.78nF
Number of Channels 1
Turn-On Delay Time 22ns
Radiation Hardening No
Turn-Off Delay Time 37ns
Max Power Dissipation 277.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 340mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 17A
Drain to Source Voltage (Vdss) 600V

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