SIHP18N50C-E3
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Краткое описание:
500V 18A N-CH MOSFET TO-220AB
Дополнительная информация
N-channel power MOSFET for through-hole mounting in a TO-220-3 package. Features a 500V drain-source voltage (Vdss) and a continuous drain current (ID) of 18A. Offers a maximum drain-source on-resistance (Rds On) of 270mR at a nominal gate-source voltage (Vgs) of 5V. Includes fast switching characteristics with turn-on delay time of 80ns and turn-off delay time of 32ns. Maximum power dissipation is 223W, with operating temperatures ranging from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | E |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 44ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 270mR |
| Nominal Vgs | 5V |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 2.942nF |
| Threshold Voltage | 5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 80ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 223W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 225mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 270mR |
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