SIHP22N60E-E3

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SIHP22N60E-E3 - Vishay(Siliconix)
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Краткое описание: 600V 21A N-CH Power MOSFET TO-220AB 180mR
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET with 600V drain-source voltage and 21A continuous drain current. Features 180mΩ maximum drain-source on-resistance and 227W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. This through-hole component is housed in a TO-220AB package and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.65mm
Height 15.49mm
Length 10.51mm
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 54ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 180mR
Package/Case TO-220AB
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 1.92nF
Power Dissipation 227W
Threshold Voltage 2V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 18ns
Radiation Hardening No
Turn-Off Delay Time 59ns
Reach SVHC Compliant Unknown
Max Power Dissipation 227W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 180mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 21A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 180mR

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