SIHP23N60E-GE3
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Краткое описание:
N-CHANNEL MOSFET 600V 23A TO-220-3 Through Hole
Дополнительная информация
The SIHP23N60E-GE3 is a TO-220-3 packaged N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 23A and a drain to source resistance of 158mR. The device is RoHS compliant and has a maximum power dissipation of 227W. It is available in a package quantity of 1000 and is packaged in a rail/tube format.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 34ns |
| Packaging | Rail/Tube |
| Rds On Max | 158mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 2.418nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 66ns |
| Max Power Dissipation | 227W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 158mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Voltage (Vdss) | 600V |
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