SIHP24N65EF-GE3
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Краткое описание:
N-CHANNEL MOSFET 650V 24A 250W TO-220-3
Дополнительная информация
The SIHP24N65EF-GE3 is a high-power N-channel MOSFET with a maximum drain to source voltage of 650V and a continuous drain current of 24A. It features a low drain to source resistance of 156mR and a maximum power dissipation of 250W. The device is packaged in a TO-220-3 flange mount package and is suitable for use in high-power applications. The operating temperature range is from -55°C to 150°C, and the device is compliant with RoHS regulations.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 46ns |
| Packaging | Rail/Tube |
| Rds On Max | 156mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 2.656nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 24ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 156mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 650V |
