SIHP30N60E-GE3
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Краткое описание:
600V N-CH MOSFET, 29A, 125mR, TO-220
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source voltage and 29A continuous drain current. This through-hole component offers a low 125mΩ maximum drain-source on-resistance. Key switching characteristics include a 19ns turn-on delay and 36ns fall time, with 2.6nF input capacitance. Maximum power dissipation is rated at 250W, operating within a -55°C to 150°C temperature range. Packaged in TO-220-3, this lead-free transistor is ideal for power switching applications.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 36ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 125mR |
| Package/Case | TO-220-3 |
| Package Quantity | 1000 |
| Input Capacitance | 2.6nF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 63ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 125mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 125mR |
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