SIHP6N40D-GE3
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N-Channel MOSFET, 400V, 6A, 1Ω RdsOn, TO-220AB
Дополнительная информация
N-channel MOSFET transistor featuring 400V drain-source voltage and 6A continuous drain current. Offers 0.85 ohm drain-source resistance at 10V gate-source voltage, with a 3V threshold voltage. This through-hole component, housed in a TO-220AB package, boasts a maximum power dissipation of 104W and operates within a -55°C to 150°C temperature range. Key switching characteristics include an 8ns fall time, 12ns turn-on delay, and 14ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.65mm |
| Height | 9.01mm |
| Length | 10.51mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Rail/Tube |
| Rds On Max | 1R |
| Package/Case | TO-220AB |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 311pF |
| Power Dissipation | 104W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 400V |
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