SIHW47N60EF-GE3
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Краткое описание:
N-CHANNEL 47A 600V TO-247-3 MOSFET
Дополнительная информация
The SIHW47N60EF-GE3 is a 47A N-CHANNEL MOSFET with a maximum drain to source voltage of 600V. It features a drain to source resistance of 67mR and a maximum power dissipation of 379W. The device is packaged in a TO-247-3 package and is suitable for through hole mounting. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.340411oz |
| Polarity | N-CHANNEL |
| Fall Time | 58ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 65mR |
| Package/Case | TO-247-3 |
| RoHS Compliant | Yes |
| Package Quantity | 480 |
| Input Capacitance | 4.854nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 94ns |
| Max Power Dissipation | 379W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 67mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Voltage (Vdss) | 600V |
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