SIHW47N65E-GE3
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Краткое описание:
N-CHANNEL MOSFET 650V 47A TO-247-3
Дополнительная информация
The SIHW47N65E-GE3 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 47A and a drain to source voltage of 650V. The device is packaged in a TO-247-3 flange mount package and is RoHS compliant. The MOSFET has a maximum power dissipation of 417W and a gate to source voltage of 20V.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.340411oz |
| Polarity | N-CHANNEL |
| Fall Time | 103ns |
| Packaging | Rail/Tube |
| Rds On Max | 72mR |
| Package/Case | TO-247-3 |
| RoHS Compliant | Yes |
| Package Quantity | 480 |
| Input Capacitance | 5.682nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 47ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 156ns |
| Max Power Dissipation | 417W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 72mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Voltage (Vdss) | 650V |
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