SIR158DP-T1-GE3
Производится
Увеличить
Краткое описание:
30V 40A N-CH MOSFET, 1.8mR Rds On, PPAK SO-8
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 60A continuous drain current. Features low 1.8mR drain-source on-resistance and 83W maximum power dissipation. Operates from -55°C to 150°C, with fast switching times including a 16ns fall time. Surface mount PPAK SO-8 package, 4.9mm length, 5.89mm width, and 1.04mm height. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.8mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 4.98nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 28ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 47ns |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 1.8MR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
