SIR164DP-T1-GE3
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Краткое описание:
N-CH MOSFET 30V 50A 2.5mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET, 30V Vdss, 50A continuous drain current, and 2.5mR Rds(on) max. Features a 1.2V threshold voltage, 3.95nF input capacitance, and 69W max power dissipation. Operates from -55°C to 150°C in a surface-mount SOIC package. Includes fast switching times with 35ns turn-on and 52ns turn-off delays.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 39ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.5mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.95nF |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 52ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 69W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.2MR |
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