SIR464DP-T1-GE3
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Краткое описание:
30V 50A N-CH MOSFET 3.1mR Rds On PPAK SO-8
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 50A continuous drain current. Features low 3.1mΩ drain-source on-resistance and 69W max power dissipation. Operates from -55°C to 150°C, with fast switching times including 35ns turn-on and 48ns turn-off delays. Surface mountable in a PPAK SO-8 package, this RoHS compliant component offers a 1.2V threshold voltage and 3.545nF input capacitance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.1mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.545nF |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 35ns |
| Turn-Off Delay Time | 48ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 69W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.1mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.1mR |
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