SIR492DP-T1-GE3
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Краткое описание:
N-CH MOSFET 12V 27A 3.8mR SOIC
Дополнительная информация
N-channel MOSFET with 12V Vdss and 40A continuous drain current. Features low 3.8mR Rds On, 1V threshold voltage, and 4.2W power dissipation. Surface mountable in an SOIC package, this component offers fast switching with 27ns turn-on and 53ns turn-off delay times. Operating temperature range from -50°C to 150°C, RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.8mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 3.72nF |
| Power Dissipation | 4.2W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 53ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 4.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 3.8mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 4.7MR |
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