SIR688DP-T1-GE3
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Краткое описание:
Power Field-Effect Transistor, 60A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
Дополнительная информация
Power Field-Effect Transistor, 60A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 3.105nF |
| Radiation Hardening | No |
| Turn-Off Delay Time | 31ns |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 60V |
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