SIR846ADP-T1-GE3
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Краткое описание:
N-CH MOSFET, 100V, 60A, 7.8mR, 83W, SMD
Дополнительная информация
N-CHANNEL Power MOSFET, General Purpose, featuring 100V Drain-Source Voltage (Vdss) and 60A Continuous Drain Current (ID). Offers low 7.8mR Drain-Source On-Resistance (Rds On) at a 1.8V Threshold Voltage. Designed for surface mount applications with a compact 6.25mm x 5.26mm x 1.12mm package. Maximum power dissipation is 83W, operating from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.26mm |
| Height | 1.12mm |
| Length | 6.25mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.8mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 2.35nF |
| Threshold Voltage | 1.8V |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 9.5MR |
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